Best Paper 2023
"AlN/Al0.25Ga0.75N/AlN Quantum Well HEMTs with fT/fmax of 67/166 GHz"
Papers based on the independent research of the graduate student who is presenting the work are eligible for the Best Student Paper Award. The abstract must be identified as a student paper at the time of submission. The award is made based on the quality of the written abstract and the oral or poster presentation. The awards will be presented at the next year's Device Research Conference.
"AlN/Al0.25Ga0.75N/AlN Quantum Well HEMTs with fT/fmax of 67/166 GHz"
"Normally-off Quasi-vertical GaN FinFET on SiC Substrate with Record Small-signal Current Gain of ft = 10.2 GHz"
“Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure”
(Advisor: Peide Ye)
"Multi-Active Region AIGaN Ultraviolet Light Emitting Diodes with Transparent Tunnel Junctions"
(Advisor: Siddharth Rajan)
"Tunnel Junction-Enabled High-Efficiency Multi-Active Region III-Nitride Light Emitting Diodes"
(Advisor: Peide Ye)
"Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices"
(Advisor: Eilam Yalon)
“Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET”
(Advisor: Sayeef Salahuddin)
“Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures”
(Advisors: Tibor Grasser, TU Wien; Joerg Appenzeller, Purdue University)
“Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors”
(Advisor: Aaron Franklin)
"Gigahertz Zinc-Oxide TFT-Based Oscillators"
(Advisors: James C. Sturm, Naveen Verma and Sigurd Wagner)
“Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes”
(Advisors: Debdeep Jena and Huili (Grace) Xing)
“Domain Formation in Ferroelectric Negative Capacitance Devices”
(Advisor: Thomas Mikolajick)
“Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters”
(Advisor: Eric Pop)
"Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature"
(Advisors: Debdeep Jena and Huili (Grace) Xing)
"Edge contacts to multilayer MoS2 using in situ Ar ion beam"
(Advisor: Aaron Franklin)
“Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures”
(Advisors: Sanjay Banerjee and Emanuel Tutuc)
“Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements”
(Advisor: Eric Pop)
“InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”
(Advisor: Peide Ye)
“Top-gated WSe2 field-effect transistors with Pt contacts”
(Advisor: Sanjay Banerjee)
"In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V"
(Advisor: Erik Lind)
"Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization"
(Advisor: Marc Heyns)
(Advisor: Seth Bank)
(Advisor: Pallab Bhatacharya)