Awards

Best Student Paper and Best Poster Awards

Papers based on the independent research of the graduate student who is presenting the work are eligible for the Best Student Paper Award.  The abstract must be identified as a student paper at the time of submission.  The award is made based on the quality of the written abstract and the oral or poster presentation.  The awards will be presented at the next year's Device Research Conference.

  • 2023

    • Best Paper 2023

      "AlN/Al0.25Ga0.75N/AlN Quantum Well HEMTs with fT/fmax of 67/166 GHz"

    • Best Poster 2023

      "Normally-off Quasi-vertical GaN FinFET on SiC Substrate with Record Small-signal Current Gain of ft = 10.2 GHz"

  • 2022

    • Best Paper 2022

      Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure”
      (Advisor: Peide Ye)

    • Best Poster 2022

      "Multi-Active Region AIGaN Ultraviolet Light Emitting Diodes with Transparent Tunnel Junctions"
      (Advisor: Siddharth Rajan)

  • 2021

    • Best Paper 2021

      "Tunnel Junction-Enabled High-Efficiency Multi-Active Region III-Nitride Light Emitting Diodes"
      (Advisor: Peide Ye)

    • Best Poster 2021

      "Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices"
      (Advisor: Eilam Yalon)

  • 2020

    • Best Paper 2020

      “Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET”
      (Advisor: Sayeef Salahuddin)

       

    • Best Paper 2020

      “Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures”
      (Advisors: Tibor Grasser, TU Wien; Joerg Appenzeller, Purdue University)

    • Best Poster 2020

      “Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors”
      (Advisor: Aaron Franklin)

  • 2019

    • Best Paper 2019

      "Gigahertz Zinc-Oxide TFT-Based Oscillators"
      (Advisors: James C. Sturm, Naveen Verma and Sigurd Wagner)

    • Best Poster 2019

      “Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes”
      (Advisors: Debdeep Jena and Huili (Grace) Xing)

  • 2018

    • Best Paper 2018

      “Domain Formation in Ferroelectric Negative Capacitance Devices”
      (Advisor: Thomas Mikolajick)

    • Best Poster 2018

      “Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters”
      (Advisor: Eric Pop)

  • 2017

    • Best Paper 2017

      "Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature"
      (Advisors: Debdeep Jena and Huili (Grace) Xing)

    • Best Poster 2017

      "Edge contacts to multilayer MoS2 using in situ Ar ion beam"
      (Advisor: Aaron Franklin)

  • 2016

    • Best Paper 2016

      “Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures”
      (Advisors: Sanjay Banerjee and Emanuel Tutuc)

    • Best Poster 2016

      “Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements”
      (Advisor: Eric Pop)

      • Isha Datye

        Stanford University

      • Alexander Gabourie

        Stanford University

  • 2015

    • Best Paper 2015

      “InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”
      (Advisor: Peide Ye)

    • Best Poster 2015

      “Top-gated WSe2 field-effect transistors with Pt contacts”
      (Advisor: Sanjay Banerjee)

  • 2014

    • Best Paper 2014

      "In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V"
      (Advisor: Erik Lind)

    • Best Poster 2014

      "Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization"
      (Advisor: Marc Heyns)

  • 2013

    • Best Paper 2013

      (Advisor: Seth Bank)

    • Best Poster 2013

      (Advisor: Pallab Bhatacharya)