• "AlN/Al0.25Ga0.75N/AlN Quantum Well HEMTs with fT/fmax of 67/166 GHz"

    • "Normally-off Quasi-vertical GaN FinFET on SiC Substrate with Record Small-signal Current Gain of ft = 10.2 GHz"

    • “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure”
      (Advisor: Peide Ye)

    • "Multi-Active Region AIGaN Ultraviolet Light Emitting Diodes with Transparent Tunnel Junctions"
      (Advisor: Siddharth Rajan)

    • "Tunnel Junction-Enabled High-Efficiency Multi-Active Region III-Nitride Light Emitting Diodes"
      (Advisor: Peide Ye)

    • "Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices"
      (Advisor: Eilam Yalon)

    • “Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET”
      (Advisor: Sayeef Salahuddin)

       

    • “Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures”
      (Advisors: Tibor Grasser, TU Wien; Joerg Appenzeller, Purdue University)

    • “Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors”
      (Advisor: Aaron Franklin)

    • "Gigahertz Zinc-Oxide TFT-Based Oscillators"
      (Advisors: James C. Sturm, Naveen Verma and Sigurd Wagner)

    • “Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes”
      (Advisors: Debdeep Jena and Huili (Grace) Xing)

    • “Domain Formation in Ferroelectric Negative Capacitance Devices”
      (Advisor: Thomas Mikolajick)

    • “Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters”
      (Advisor: Eric Pop)

    • "Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature"
      (Advisors: Debdeep Jena and Huili (Grace) Xing)

    • "Edge contacts to multilayer MoS2 using in situ Ar ion beam"
      (Advisor: Aaron Franklin)

    • “Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures”
      (Advisors: Sanjay Banerjee and Emanuel Tutuc)

    • “Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements”
      (Advisor: Eric Pop)

      • Isha Datye

        Stanford University

      • Alexander Gabourie

        Stanford University

    • “InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”
      (Advisor: Peide Ye)

    • “Top-gated WSe2 field-effect transistors with Pt contacts”
      (Advisor: Sanjay Banerjee)

    • "In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V"
      (Advisor: Erik Lind)

    • "Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization"
      (Advisor: Marc Heyns)

    • (Advisor: Seth Bank)

    • (Advisor: Pallab Bhatacharya)